Photoelastic characterization of residual strain in MWA SI InP crystal wafers

摘要

Residual strain in semi-insulating InP wafers was characterized by using a scanning infrared polariscope (SIRP). SIRP maps of single-step and multi-step annealed wafers are compared with those of the as-grown state. In general, a fair decrease of residual strain by wafer annealing was found. The most homogeneous distribution was revealed in the wafer treated by multiple wafer annealing.