Organic field-effect transistors based on 3,7-bis5-(4-n-hexylphenyl)-2-thienyldibenzothiophene oligomer

摘要

The structures and the morphologies of the vacuum-thermal deposited films based on a new phenylene-thiophene oligomer, 3,7-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene (37HPTDBT), have been characterized. The organic field-effect transistors (OFETs) with thin 37HPTDBT films exhibited high mobilities ranging from 0.06–0.3 cm2/Vs.