ORGANIC FIELD-EFFECT TRANSISTOR STORAGE BASED ON NANO-GRID MOLECULE AND PREPARATION METHOD THEREFOR

摘要

Disclosed are an organic field-effect transistor storage based on nano-grid molecule and a preparation method therefor, relating to the field of organic electronics and information technology. The storage comprises, from top to bottom, a source drain electrode, an organic semiconductor layer, a nano-grid molecule storage layer, a gate insulating layer, a substrate and a gate electrode formed on the substrate. The storage belongs to typical charge capture-release mechanism, shows such advantages as obvious charge maintenance stability, tolerance high large storage window and high storage density in comparison with polymer electret storages and floating gate type storages, and also shows such advantages as flexibility, large area and low technology cost of organic storages. The storage realizes great improvement storage capacity, switching speed and stability by using storage components prepared with simple technique measures, thereby reducing the preparation cost of components and being convenient for promotion and application.