Model of the 1/f Noise in GaN/AlGaN Heterojunction Field Effect Transistors

摘要

The model describing the 1/f noise in GaN/AlGaN Heterojunction Field Effect Transistors (HFETs) has been proposed. This model links the 1/f noise to the phonon assisted tunneling from the two dimensional electron gas in the device channel into the tail states near the conduction band of the GaN layer. The model predicts a fairly weak temperature dependence of the 1/f noise in the temperature interval from 50 K to 600 K with the value of the Hooge parameter within the range of 10–3 – 10–5. Both these predictions are in agreement with experimental data.