Influence of Small Doses of Gamma Irradiation on Transport and Noise Properties of SiC MESFETs

摘要

Steady-state characteristics and low-frequency noise spectra of SiC-based metal-semiconductor field-effect transistors (MESFETs) before and after small doses (1×106 rad) of gamma radiation treatment are studied. The structural ordering of non-controllable impurities with radiation leads to an increase in threshold voltage, decrease of the channel's resistance and reduces the number of G-R components observed in the total noise spectra of the devices.