A Semiconductor Device Noise Model: ADeterministic Approach to SemiconductorDevice Current Noise for SemiclassicalTransport

摘要

In this paper, we present a deterministic approach to calculate terminal current noisecharacteristics in semiconductor devices in the framework of semiclassical transport based onthe spherical harmonics of the Boltzmann Transport Equation. The model relies on the solutionof the Boltzmann equation in the frequency domain with special initial and boundary conditions.The terminal current fluctuation is directly related to scattering without the additional Langevinnoise term added to the calculation. Simulation results are presented for the terminal currentspectral density for a 1-D n~+nn~+structure due to elastic-acoustic and intervally scattering.