Small-Signal and Noise Model of Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Devices for Low-Noise Amplifier

摘要

An RF small-signal and noise model of fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented. The model together with its intrinsic model parameters extracted from de-embedding extrinsic parameters reproduces the frequency and noise response of FD-SOI MOSFETs. We have applied the proposed model to a low-noise amplifier (LNA) operating at 5.5 GHz, which is implemented in a 0.15 μm FD-SOI complementary metal-oxide-semiconductor (CMOS) technology. The simulated small-signal and noise performance of the LNA are in good agreement with the measured data of the fabricated LNA.