Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices

摘要

In this work, based on robust experimental results, we derive a novel theoretical probabilistic approach to model the low-frequency noise power S(f) in semiconductor devices. Using the proposed approach we obtained, analytically, the average of the integrated noise power W-p = integral(fII)(fI) S(f)df as a function of the frequency bandwidth [f(L),f(H)], showing that < W-p > alpha In-2(f(H)/f(L)). The second moment and the relative error in W-p are also calculated. A numerical fit for the relative error was performed, showing that lower and upper bound estimates to noise power depend only on the ratio f(H)/f(L). (c) 2005 Elsevier B.V. All rights reserved.