Low-frequency noise in 25 nm independent double gate MOSFETs

摘要

We report on the characterization of Low-Frequency (LF) noise in planar Double Gate MOSFETs with Independent Gates (IDG). The LF noise behavior in IDG n-MOSFETs is well described by the correlated carrier number - mobility fluctuation model. LF noise characteristics indicate that this device can be a suitable candidate, not only for digital applications, but also for analog and RF applications.