The Low-Frequency Noise Behavior of pMOSFETs with Embedded SiGe Source/Drain Regions

摘要

The low-frequency noise behavior of silicon pMOSFETs with embedded SiGe source/drain regions is studied. The gate stack consists of HfSiO_(x) covered by a Fully-SIlicided (FUSI) gate electrode. It is shown that while the mobility and drive current are significantly enhanced by this strain-engineering approach, the 1/f noise is little affected, irrespective of the germanium content, i.e., of the amount of compressive strain in the channel. From this, it is derived that first of all, the embedded source/drain processing does not degrade the gate stack quality and, second, no evidence for an intrinsic strain effect on the 1/f noise is observed here.