Impact of substrate bias on GIDL for thin-BOX ETSOI devices

摘要

We present a detailed analysis of substrate bias (Vbb) impact on gate induced drain leakage (GIDL) for thin-BOX extremely thin silicon-on-insulator (ETSOI) with BOX thickness (TBOX) ranging from 10 to 50 nm and inversion layer thicknesses (TINV) ranging from 1.1 to 1.3 nm. The GIDL behavior for thin-BOX under various substrate biases (Vbb) and partially depleted SOI (PDSOI) devices with different body doping are compared.