Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

摘要

Bulk traps in the high-resistivity buffer stack underneath the 2-dimensional electron gas (2DEG), which can interact with the high vertical electric field at OFF state, impose a critical challenge to the dynamic ON-resistance (RON) of AlGaN/GaN-on-Si power devices. In this paper, the impact of substrate bias polarity on carrier injection/transport and buffer-induced current collapse has been investigated by using ramped and transient back-gating characterizations as well as TCAD simulations. High voltage applied to the conductive Si substrate can modulate 2DEG conductivity through the back-gate effect, whereby the dynamics of both acceptor and donor buffer traps are identified. Distinct buffer trapping and asymmetric vertical leakage under opposite top-to-substratebias polarities have been observed, which are attributed to the fundamentally different carrier injection/transport mechanisms. It is suggested that the energy barrier at the nucleation-layer/Si interface can limit the electron injection from Si substrate into the buffer stack and consequently influence the bufferrelated current collapse.