Quantum insights in gate oxide charge-trapping dynamics in nanoscale MOSFETs

摘要

Charge trapping in the gate oxide of nanoscale MOSFETs featuring an ‘atomistic’ channel doping profile has been revealed as a key concept to explain the RTN and BTI phenomena strongly affecting contemporary technology transistors performance. By means of a 2D Wigner function approach, in this paper we investigate the trapping of a single electron in the gate oxide of a 25nm transistor including the scattering effects due to discrete dopants in the channel. We demonstrate the ability of our simulation methodology to capture not only the quantum nature but also the transient behavior of charge-trapping and scattering phenomena.