Enhanced Low Dose Rate Sensitivity of PNP Transistor at Extreme-Low Dose Rates

摘要

The ELDRS of PNP transistors were investigated at dose rates of 10, 5, 1, and 0.1mrad(Si)/s and dose rate 100rad(Si)/s, while the evaluation of the ELDRS under the high and dose rate are performed with the Temperature-Switching-Approach Irradiation. The estimated results using Temperature-Switching-Approach were in good agreement with the experimental data.