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Enhanced Low Dose Rate Sensitivity (ELDRS) tests on advanced SiGe bipolar transistors for very high total dose applications

机译:针对高级SiGe双极晶体管的增强型低剂量率灵敏度(ELDRS)测试,适用于非常高的总剂量应用

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摘要

A new comprehensive method for assessing Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar transistors to be used for very high total doses is applied to an advanced SiGe HBT technology for its use in the ATLAS Upgrade at CERN. Conventional ELDRS assessment methods are combined with switched experiments (high/low dose rate), providing a way to verify the presence of ELDRS at very high doses in reasonable irradiation time. Additionally, an anomalous damage recovery has been found in transistors with saturated damage after further low dose rate irradiations.
机译:一种用于评估将用于极高总剂量的双极型晶体管中增强的低剂量率灵敏度(ELDRS)的新的综合方法,已应用于先进的SiGe HBT技术,以用于CERN的ATLAS升级。常规ELDRS评估方法与开关实验(高/低剂量率)相结合,提供了一种在合理的照射时间内验证非常高剂量ELDRS的存在的方法。另外,在进一步的低剂量率照射之后,在饱和损坏的晶体管中发现了异常的损坏恢复。

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  • 作者单位

    Centra National de Microelectronica (CNM-CSIC), Barcelona, Spain;

    Santa Cruz Institute for Particle Physics (SCIPP), University of California Santa Cruz, Santa Cruz, CA, USA;

    Lawrence Berkeley National Laboratory (LBNL), Physics Division, Berkeley, CA, USA;

    Santa Cruz Institute for Particle Physics (SCIPP), University of California Santa Cruz, Santa Cruz, CA, USA;

    Brookhaven National Laboratory (BNL), Upton, NY, USA;

    University of Pennsylvania, Philadelphia, PA, USA;

    Santa Cruz Institute for Particle Physics (SCIPP), University of California Santa Cruz, Santa Cruz, CA, USA;

    University of Pennsylvania, Philadelphia, PA, USA;

    Santa Cruz Institute for Particle Physics (SCIPP), University of California Santa Cruz, Santa Cruz, CA, USA;

    Centra National de Microelectronica (CNM-CSIC), Barcelona, Spain,Lawrence Berkeley National Laboratory (LBNL), Physics Division, Berkeley, CA, USA;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Radiation effect; Bipolar transistor; SiGe HBT transistors; ELDRS; Switched experiments; ATLAS Upgrade;

    机译:辐射效果;双极晶体管;SiGe HBT晶体管;ELDRS;转换实验;ATLAS升级;

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