Fracture strength of silicon wafer after different wafer treatment methods

摘要

With the increase of wafer diameter and the reduction of wafer thickness, the fracture strength of silicon wafer decreases dramatically, which has drawn much more attention in recent years. Three-point bending test is a frequently cited method used to measure the fracture strength of silicon wafer, and the measured strength is sensitive to the edge defect caused by dicing. This paper proposes a grinding and polishing wafer treatment method to eliminate the defect along the sample edges. And the fracture strength of the treated and the untreated samples are compared in this study. The result shows that the fracture strength of the treated samples is much higher than those of the untreated.