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The research on the resistance of electromigration of different connection form

机译:不同连接形式电迁移的阻力研究

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For the purpose to start the requirement on the mechanical and the electromigration reliabilities, this paper take the study on the electromigration on Cu Column Grid Array(CuCGA) and Ball Grid Array(BGA). In order to eliminate the influence by the heat migration, the study build and simulate the two models which contain the distribution of current density and temperature of the two connection form by using the software MSC.MARC. Then design the one integrated circuit to fulfill the current density which is more than 10A/cm. And take the experiment that the current density is 1.21×10A/cm, the electric time is 0h,50h, 100h,150h,200h respectively. Take and observe the metallographic diagram at last. The result shows that the peak value on current density and temperature appear at the joint interface between pad and solder. The peak value of current density and temperature of CuCGA is higher than BGA's since the average current density on pad is same. While the average current density keeps 1.21×10 A/cm, the resistance on electromigration of CuCGA joints is weaker than the BGA's joints.
机译:为目的,为了开始对机械和电迁移可靠性的要求,本文旨在研究Cu柱网格阵列(CUCGA)和球栅阵列(BGA)的电迁移。为了消除热迁移的影响,研究构建并模拟了通过使用软件MSC.MARC的包含电流密度和温度的两个模型。然后设计一个集成电路以实现大于10A / cm的电流密度。并采取实验,即电流密度为1.21×10a / cm,电时为0h,50h,100h,150h,200h,200h。终于采取并观察金相图。结果表明,电流密度和温度上的峰值出现在垫和焊料之间的接口接口处。由于垫上的平均电流密度相同,所以CUCGA的电流密度和温度的峰值高于BGA。虽然平均电流密度保持1.21×10A / cm,但CUCGA关节电迁移的电阻比BGA的关节弱。

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