Microbridge formation for low resistance interline connection using pulsed laser techniques.

摘要

MakeLinkRTM technology has been applied in many semiconductor devices to achieve high performance. Sometimes one-type-link design doesn't make desirous links for all IC manufacturing processes. In this work, four new structures, called microbridge, were designed to form all types of link. Laser processing experiments were performed to verify the designs. The results show that two-lower-level-metal-line design has higher performance (low link resistance), higher productivity (broad energy window), and higher yield than the three-lower-level-metal-line design. Therefore, it can be considered as the optimal design from the processing point of view. Two-lower-level-metal-line with lateral gap structure provides better scalability and it can be used in next generation ICs. If high-speed is the primary concern, an advanced-lateral structure is best, corresponding to its much lower resistance. The reliability tests indicate that the median-times-to-failure of all test structures are greater than nine years in operating condition, presenting reasonable lifetimes for integrated circuits used in the market.;A two-dimensional finite element plane models for microbridge formation is developed. Results are compared to the experiments with process windows to present their consistence. The model allowed for using different geometric parameters and metal-dielectric combinations optimizing the design. An optimal design diagram for the Al/SiO2 system is created to provide the designer with criteria to avoid the failure of structure. Trade-off requirements, such as process window and structure size, are also provided. Guidelines are obtained for the Cu/Low-K dielectric system.