The Simulation and Verification of The Passivation layer's Residual Stress Aiming at A Silicon-based fan-out Package Structure

摘要

In this paper, for a silicon-based fan-out package, through the method of finite element simulation, simulated the distribution of residual stress of the passivation layer after curing process, and analyzed the influence of the change of filling rate and the chip thickness to the passivation layer stress. The simulation results show that the maximum stress distribution on the passivation layer fill gaps and chip surface contact area, the lower filling rate will lead to lower stress; the thinner chip also leads to lower stress. And the fracture failure in contact area of gap and the chip surface in final product verified the simulation results.