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Mold-flow Study for Different Bump Height, Bump Pitch and Die Size in FCCSP with Molded Underfill Technology

机译:FCCSP的不同凸块高度,凸块间距和模具尺寸的模具流程研究

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Currently electrical products such as smart phone and tablet, light weight and thin feature of them are definitely required. To achieve several requirements, size of IC package assembled in limiting space become more crucial and development orientated. Microelectronics products of FCCSP (Flip Chip-Chip Scale Package) with more increasing challenges are countered to assure molding capability with rapidly advancing encapsulation process in flip chip technology such as decreasing bump height and bump pitch, especially when Molded Underfill (MUF) is used and in particular during transfer molding process. Moldflow simulation is valid method to predict and resolve in air void entrapment severely occurred under the die (air void concentrated within bump region). Optimum solutions would be found out for air void risk free of MUF FCCSP with different bump structure or die size design, which can reduce development cycle time before mass production. In this paper, two molding flow factors for void prediction will be performed by moldflow simulation software. One of the two is about characteristics of bump structure including bump height and bump pitch. By varying different bump dimensions, melt-front position of molding frontier is affected in relevantly significant. In addition, the other factor is package with different die size design. Die size also presents obvious influence on melt-front pattern while molding compound flow through region under die. From this study, some results can be concluded for getting improvement on mold flow performance of MUF FCCSP package during molding process. The first of all is MUF FCCSP with the 58μm bump height and 100μm bump pitch will perform low air void risk since there is more space under die letting compound flow though more easily. Based on the same concept mention previously, the second one is smaller die arrangement that also can be benefit to compound flowing and get better pattern of melt-front. Finally, the simulation results provide a prediction guideline that MUF FCCSP with suitable bump height/pitch and die size structure condition to prevent void issue occur under die region during molding process.
机译:目前,智能手机和平板电脑,重量轻,薄特征等电气产品绝对是必需的。为实现多种要求,在限制空间组装的IC包装的尺寸变得更为重要和发展。 FCCSP(倒装芯片芯片刻度包装)的微电子产品具有更多越来越大的挑战,以确保模塑能力,并在倒装芯片技术中快速推进封装过程,例如降低凸块高度和凸块间距,特别是当使用模制的底部填充物(MUF)时特别是在转移成型过程中。模型模拟是有效的方法来预测和在模具下严重发生的空气空隙夹紧中的空隙夹紧(空隙率集中在凸块区域内)。最佳解决方案可以出于空中无效的空气空气,其具有不同的凸块结构或模具尺寸设计,可以减少批量生产前的开发循环时间。在本文中,通过模具流模拟软件执行用于空隙预测的两个模塑流量因子。两个中的一个是关于凸块结构的特性,包括凸块高度和凸块间距。通过改变不同的凸块尺寸,模制前沿的熔体前部位置受到相关意义的影响。此外,另一个因素是具有不同芯片尺寸设计的包装。模具大小也对熔融前方图案提出了明显的影响,同时模塑化合物通过模具的区域流动。从本研究中,可以得出一些结果,以便在模制过程中提高MUF FCCSP封装的模具流动性能。首先是MUF FCCSP,58μm凸块高度,100μm凸块间距将执行低空气空气风险,因为在模具下有更多的空间,使化合物更容易流动。基于同样的概念提到先前,第二个是较小的模具布置,这也可以有益于化合物流动并获得更好的熔体熔体模式。最后,仿真结果提供了一种预测指南,该预测指南具有适当的凸块高度/俯仰和模尺结构条件,以防止模具区域在模具区域下发生空隙问题。

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