Enhancing phosphorous doping level on Ge by Sb co-doping with non-beamline implantation methods

摘要

Advanced inductively coupled plasma and atomic layer deposition (ALD) techniques with low ion energy have been used to demonstrate conformal shallow junctions of phosphorous with higher than 1E20 of dopants for germanium (Ge). Adding antimony (Sb) in both plasma-assisted and ALD doping was found to enhance the phosphorous (P) dopant level dramatically. Various annealing techniques were compared to understand the impact to dopant activation and levels to form shallow junctions with enhanced P level.