...
机译:通过C共掺杂增强植入的Ge中的电活化
Department of Electronic Materials Engineering, Australian National University, Canberra ACT 0200, Australia;
Department of Electronic Materials Engineering, Australian National University, Canberra ACT 0200, Australia;
Nuclear Science and Technology Department, Brookhaven National Laboratory, Upton, New York 11973, USA;
Department of Electronic Materials Engineering, Australian National University, Canberra ACT 0200, Australia;
KU Leuven, Instituut voor Kern-en Stralingsfysica, 3001 Leuven, Belgium;
Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168, Australia;
Department of Electronic Materials Engineering, Australian National University, Canberra ACT 0200, Australia;
KU Leuven, Instituut voor Kern-en Stralingsfysica, 3001 Leuven, Belgium;
Applied Physics, School Applied Sciences, RMIT University, Melbourne 3001, Australia;
Department of Electronic Materials Engineering, Australian National University, Canberra ACT 0200, Australia;
机译:C共掺杂增强了植入式Si0.35Ge0.65中的电激活
机译:植入Si_(1-x)Ge_x合金的电学和结构性能
机译:植入锗的结构和电学性质
机译:通过共掺杂增强BifeO_3多二二种材料的电性能
机译:活性污泥中粉末状活性炭的添加(抑制作用,膨润土,吸附作用)增强了硝化作用。
机译:通过锆共掺杂增强镁掺杂锂铌酸锂晶体中的紫外线损伤性
机译:通过共掺杂GA和N增强ZnO透明半导体薄膜的P型传导的电性能和稳定性
机译:使用粉末活性炭添加到活性污泥系统中从制药废水中去除COD(化学需氧量)