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Method for using a field implant mask to correct low doping levels at the outside edges of the base in a walled-emitter transistor structure
Method for using a field implant mask to correct low doping levels at the outside edges of the base in a walled-emitter transistor structure
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机译:在壁式发射极晶体管结构中使用场注入掩模来校正基极外侧边缘处的低掺杂水平的方法
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摘要
An embodiment of the present invention is a process for semiconductor device having a silicon substrate. The process comprises positioning at least one field implant mask and field implanting a silicon substrate around a bipolar active region in a substrate such that boron atoms are blocked out of an active region, and only the field region surrounding said active area is implanted, said implanting such that a predetermined layout area of a semiconductor device does not need to be increased to compensate for a BV.sub.bso problem.
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