Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth using RTA Technique

摘要

Single-crystal Ge layers on insulating films (GOI) are desired to achieve advanced 3-dimensional large-scale integrated circuits and high-performance thin-film transistors. Rapid-melting Ge growth seeded from Si substrates, which utilizes rapid thermal annealing (RTA) technique with narrow Ge stripes on insulator, achieves chip-scale (~cm length) GOI structures with (100), (110), and (111) orientations. Profile of Si in Ge stripe is robustly controlled by sample structures (stripe length) and process conditions (cooling rate).