Ultra-Shallow Carborane Molecular Implant for 22-nm node p-MOSFET Performance Boost

摘要

In this paper, for the first time, Carborane molecular implant is shown to provide performance boost applicable for both 22nm Low Power and High Performance applications. The impact of ultra-shallow Carborane incorporation into pMOS S/D-extension was investigated. It was found that the activation of surface Boron was enhanced by the ultra-shallow carbon incorporation inherent to the Carborane molecule. PMOS Transistor characteristics demonstrate that drive current, short channel effect, overlap capacitance as well as leakage are significantly improved by the chemical and physical effects of the Carborane molecule.