Anomalous Behavior in the Dependence of Carrier Activation on Implant Dose for Extremely Shallow Source/Drain Extensions Activated by Flash Lamp Annealing

摘要

With the scaling to smaller geometries of complimentary metal-oxide-semiconductor (CMOS) devices, the use of millisecond annealing (MSA), such as flash lamp annealing (FLA) and laser annealing, has become more prevalent for ultra-shallow junctions (USJ). This is because, with MSA, high dopant activation and less dopant diffusion can be achieved, attributes which are essential for the USJs required for scaled devices [1-7].