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机译:闪光灯退火对注入硼的多晶硅薄膜中电活化的影响
Department of Materials Science and Engineering, Hongik University, Seoul 121-791, Republic of Korea;
Department of Mechanical and Systems Design Engineering, Hongik University, Seoul 121-791, Republic of Korea;
Department of Materials Science and Engineering, Hongik University, Seoul 121-791, Republic of Korea;
Department of Materials Science and Engineering, Hongik University, Seoul 121-791, Republic of Korea;
Department of Materials Science and Engineering, Hongik University, Seoul 121-791, Republic of Korea;
Viatron Technologies, Kyeonggi-Do 441-811, Republic of Korea;
Department of Mechanical and Systems Design Engineering, Hongik University, Seoul 121-791, Republic of Korea;
Department of Materials Science and Engineering, Hongik University, Seoul 121-791, Republic of Korea;
Boron; Flash lamp annealing; Ion activation; Polycrystalline Si thin films;
机译:通过闪光灯退火由非晶硅膜形成的多晶硅膜的电性能
机译:通过a-Si膜的闪光灯退火形成的薄膜多晶硅太阳能电池
机译:利用闪光灯退火形成的多晶硅膜选择薄膜太阳能电池背电极的材料
机译:通过闪光灯退火改善Utro-Tell-Thind玻璃上ITO薄膜的电气和光学性质
机译:闪光灯退火多晶硅的PMOS TFT工程源/通道/漏极区
机译:磁控溅射和闪光灯退火形成NiGe薄膜
机译:等离子体增强化学气相沉积的炉子和闪光灯退火硅薄膜的比较研究