A review is given of the junction technology used to realize and preserve special high-doped, abrupt doping profiles for silicon-on-glass high-frequency, high-linearity varactors. Three advanced doping techniques are used: (i) reduced-pressure chemical-vapor deposition (CVD) Si-epitaxy with sophisticated control of arsenic doping during deposition, (ii) pure boron atmospheric-pressure CVD for formation of an extremely ultrashallow p{sup}+n diode, and (iii) excimer laser annealing of implanted arsenic to form ultrashallow n{sup}+ regions.
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