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Key Processes of Silicon-On-Glass MEMS Fabrication Technology for Gyroscope Application

机译:陀螺仪应用玻璃硅MEMS制造技术的关键工艺

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摘要

MEMS fabrication that is based on the silicon-on-glass (SOG) process requires many steps, including patterning, anodic bonding, deep reactive ion etching (DRIE), and chemical mechanical polishing (CMP). The effects of the process parameters of CMP and DRIE are investigated in this study. The process parameters of CMP, such as abrasive size, load pressure, and pH value of SF1 solution are examined to optimize the total thickness variation in the structure and the surface quality. The ratio of etching and passivation cycle time and the process pressure are also adjusted to achieve satisfactory performance during DRIE. The process is optimized to avoid neither the notching nor lag effects on the fabricated silicon structures. For demonstrating the capability of the modified CMP and DRIE processes, a z-axis micro gyroscope is fabricated that is based on the SOG process. Initial test results show that the average surface roughness of silicon is below 1.13 nm and the thickness of the silicon is measured to be 50 μm. All of the structures are well defined without the footing effect by the use of the modified DRIE process. The initial performance test results of the resonant frequency for the drive and sense modes are 4.048 and 4.076 kHz, respectively. The demands for this kind of SOG MEMS device can be fulfilled using the optimized process.
机译:基于玻璃上硅(SOG)工艺的MEMS制造需要许多步骤,包括构图,阳极键合,深反应离子刻蚀(DRIE)和化学机械抛光(CMP)。在这项研究中研究了CMP和DRIE工艺参数的影响。检查CMP的工艺参数,例如磨料尺寸,负载压力和SF1溶液的pH值,以优化结构和表面质量的总厚度变化。蚀刻和钝化循环时间的比例以及工艺压力也要进行调整,以在DRIE过程中获得令人满意的性能。该工艺经过优化,既避免了对已加工的硅结构的刻痕也没有滞后效应。为了证明改进的CMP和DRIE工艺的能力,制造了基于SOG工艺的z轴微陀螺仪。初步测试结果表明,硅的平均表面粗糙度低于1.13 nm,测得的硅厚度为50μm。通过使用改进的DRIE工艺,可以很好地定义所有结构,而不会产生立足效果。驱动模式和感测模式的谐振频率的初始性能测试结果分别为4.048和4.076 kHz。使用优化的工艺可以满足对此类SOG MEMS器件的需求。

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