Evaluation of Al-doped SPE ultrashallow P+N Junctions for use as PNP SiGe HBT Emitters

摘要

The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×10{sup}5-1.2×10{sup}6 cm/s and 2-3×10{sup}(-8)s, respectively.