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Two-scale vs three-scale FE analyses of shock-induced failure in polysilicon MEMS

机译:两种规模对多晶硅MEMS的冲击诱导失效三种FE分析

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Shock-induced failure of polysilicon MEMS is investigated by adopting a multi-scale approach. To understand the capability of this approach and to assess its accuracy, we compare the failure forecasted through two-scale and three-scale simulations. In the first case we model the response of the device to the shocks at the package level (macroscopic scale) and at the sensor level (mesoscopic scale). In the latter case we also allow for micro-structural features of the polysilicon film constituting the movable parts of the MEMS, so as to track the failure mode. Focusing on a commercial off-the-shelf uniaxial accelerometer subject to drops, results of the three-scale approach show that the micro-cracking leading to failure is confined inside a rather narrow region close to the anchor points. Outcomes of the two-scale approach correctly match this evidence, provided an appropriately defined failure criterion for the anisotropic polysilicon film is adopted. Moreover, the time to failure predicted by the two approaches well agree. Therefore, while the three-scale approach furnishes much insights on the failure mode, the overall response of the sensor appears to be correctly (from an industrial perspective) estimated by the far simpler and more economic two-scale simulations.
机译:通过采用多尺度方法,研究了冲击诱导的多晶硅MEMS失效。要了解这种方法的能力并评估其准确性,我们将通过两种规模和三种模拟进行比较失败。在第一种情况下,我们将设备的响应模拟到包装水平(宏观刻度)和传感器级(介​​观标尺)处的冲击。在后一种情况下,我们还允许构成MEMS的可移动部件的多晶硅膜的微结构特征,以便跟踪故障模式。专注于商业现成的单轴加速度计,其滴落,三种方法的结果表明,导致故障的微裂纹被限制在靠近锚点的相当窄的区域内。两种方法的结果正确匹配了本证据,所以采用适当定义的各向异性多晶硅膜的失效标准。而且,两种方法预测的失败时间很好地同意。因此,虽然三种方法对故障模式提供了很多洞察力,但传感器的整体响应似乎是正确的(从工业角度来看)估计,由更简单更简单和更经济的二维模拟。

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