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Temperature study of high-drive capability buffer for phase change memories

机译:相变存储器的高驱动能力缓冲器的温度研究

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Phase Change Memory (PCM) is a non-volatile memory technology with wide programming window and continuously improving data retention performance. In order to drive the variable load PCM exhibits, the amplifier providing programming pulses to the cell must be able to accurately control pulse parameters. In this paper, we present a unity gain buffer capable of driving resistive loads varying up to three orders of magnitude. The buffer can replicate voltage pulses of amplitude up to 4.5 V with minimum rise and fall times. The study of the circuit behaviour in high-temperature environments demonstrates its accuracy over a temperature range from −50 °C up to 200 °C, enabling programming of PCM based on innovative materials in applications requiring reliable operation at high temperatures.
机译:相变内存(PCM)是具有宽编程窗口的非易失性存储器技术,并连续提高数据保留性能。为了驱动可变负载PCM展示,放大器向单元提供编程脉冲必须能够精确控制脉冲参数。在本文中,我们提出了一种能够驱动电阻载荷的UNICE增益缓冲器,其变化高达三个数量级。缓冲器可以将幅度的电压脉冲复制至4.5V,最小上升和下降时间。高温环境中的电路行为的研究展示了其在-50°C的温度范围内的精度,高达200°C,可根据需要在高温下可靠运行的应用中的创新材料进行PCM编程。

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