MEMORY MODULE INCLUDING A PLURALITY OF PHASE CHANGE MEMORIES, A BUFFER RAM AND A FLASH MEMORY, CAPABLE OF IMPROVING THE WRITING OPERATION OF A MAIN MEMORY BY INSTALLING A DRAM TO PERFORM A BUFFER OPERATION BETWEEN THE MAIN MEMORY AND THE OUTSIDE

摘要

PURPOSE: A memory module including a plurality of phase change memories, a buffer RAM, and a flash memory is provided to prevent the deterioration of a read operation property by performing a bypass function in a reading operation.;CONSTITUTION: A plurality of main memories(111-118) store data. A buffer RAM(120) performs the buffer function between the main memories and the outside by temporarily storing data inputted and outputted from the nonvolatile memories. A NAND flash memory(130) stores data stored in the buffer RAM in a power supply and block process. The buffer RAM includes a power sensing circuit to generate the writing command signal of the NAND flash memory by sensing the power voltage of the memory module.;COPYRIGHT KIPO 2011