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High frequency substrate materials with highly thermal resistance and low dielectric properties

机译:具有高耐热性和低介电性能的高频基板材料

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With the development of ultralarge-scale integrated circuits, the feature sizes of integrated circuits have decreased to about 180 nm or even smaller. Consequently, reduction in the electrical resistance induced by interaction between interconnect lines, time delay caused by wire capacitance, crosstalk and power dissipation have become bottleneck problems limiting the progress of high-speed, low power cost and multi-functional integrated circuits. For this reason, finding good candidate materials with the low dielectric constant and low dissipation factor is significant issue for development of high frequency IC substrate materials. There are some common methods to obtain polymer materials with low dielectric constant and dissipation factor. First, the atoms involved in preparing dielectric polymers can be chosen such as to decrease the molecular polarizability. The choice of precursor with atoms that have appropriate electronegativity and bonding them in an appropriate configuration can reduce the molecular polarizability to low values; for example, incorporation of fluorine atoms in Polymer backbone forming C-F is good ways to approach lower the dielectric constant of polymers. In addition, incorporation of more C-C building blocks with low polarizability in the polymer backbone can also decrease the dielectric constant. Accordingly, another method that can be used to lower the dielectric constant is that to lower the density of polymer films. Another method to obtain good to dielectric polymer incorporating low Dk/Df polymer with conventional epoxy resin such as styrene maleic anhydride (SMA) and PPE to decrease the Dk/Df of original polymer. With increasing environmental consciousness, it is already the irresistible tendency for the printed circuit board materials have been changed design development focus form traditional halogen materials to environmentally friendly halogens-free materials. Therefore, the second method to approach the low Dk/Df polymer is mor- beneficial for environment than first methods. In this study, the status and the new development of low dielectric constant and dissipation factor, halogen-free and phosphorous-free copper clad laminate material will be introduced. This material possesses outstanding characteristics including high Tg, good dielectric properties, excellent thermal properties, good flammability, and so on.
机译:随着超大规模集成电路的发展,集成电路的特征尺寸已经减小到约180nm或什至更小。因此,由互连线之间的相互作用引起的电阻的减小,由线电容引起的时间延迟,串扰和功耗已成为瓶颈问题,限制了高速,低功耗和多功能集成电路的发展。因此,寻找具有低介电常数和低损耗因子的良好候选材料对于开发高频IC衬底材料是重要的问题。有一些常见的方法来获得具有低介电常数和低耗散因数的聚合物材料。首先,可以选择参与制备介电聚合物的原子,以降低分子的极化率。选择具有适当电负性的原子并以适当的构型键合原子的前体可以将分子极化率降低至较低的值;例如,在形成C-F的聚合物主链中引入氟原子是降低聚合物介电常数的好方法。此外,在聚合物主链中掺入更多具有低极化率的C-C结构单元也会降低介电常数。因此,可用于降低介电常数的另一种方法是降低聚合物膜的密度。另一种获得良好介电聚合物的方法,该方法将低Dk / Df聚合物与常规环氧树脂(例如苯乙烯马来酸酐(SMA)和PPE)结合使用,以降低原始聚合物的Dk / Df。随着环保意识的增强,已经将印刷电路板材料的设计开发重点从传统的卤素材料改变为环保的无卤素材料已成为不可抗拒的趋势。因此,第二种接近低Dk / Df聚合物的方法比第一种方法对环境更有利。在这项研究中,将介绍低介电常数和耗散因数,无卤素和无磷的覆铜层压板材料的现状和新发展。该材料具有出色的特性,包括高Tg,良好的介电性能,出色的热性能,良好的可燃性等。

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