Crystal Growth of 3C-SiC Thin-Films on Si Wafers for Microsensors of Vehicle Engines

摘要

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC thin-films for microsensors related to vehicle engine fields. The growth of the poly 3C-SiC thin-films on the oxided Si (100) wafers was been carried out by APCVD using HMDS precursor. To obtain an optimized growth condition, we have performed depositions under various conditions that temperature was adjusted from 1000°C to 1200°C, HMDS flow rates was changed from 5 to 9sccm, and carrier Gas (Ar) was kept up 500 sccm. Each samples were analyzed by XRD (X-ray diffraction), XPS (X-ray photoelectron spectroscopy), and FT-IR (Fourier transform-infrared spectroscopy) to find the optimized growth condition. Also, layer density, voids, and dislocations of the cross-section were measured by SEM (Scanning electron microscope). From the results of experiment, we have obtained that temperature and HMDS flow rates of the optimized poly 3C-SiC thin-film growth condition were 1100°C and 8 sccm, respectively.