Simulation of a silicon nanowire array texturing structure for photovoltaic device

摘要

We have simulated a photovoltaic (PV) pn junction where a texturing structure from Silicon nanowires (NWs) is added. While the NWs diameter was kept constant at a value of 100 nm, their lengths were varied over the range from 1 μm to 100 μm. A noticeable enhancement in the device efficiency is found. This improvement is due to that the added texture has significantly decreased the optical reflectance and increased the optical absorption of the surface.