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Silicon nanowire-array-textured solar cells for photovoltaic application

机译:用于光伏应用的硅纳米线阵列纹理太阳能电池

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摘要

In this paper, a vertical-aligned silicon nanowires (Si NWs) array has been synthesized and implemented to the Si NW-array-textured solar cells for photovoltaic application. The optical properties of a Si NWs array on both the plane and pyramid-array-textured substrates were examined in terms of optical reflection property. Less than 2% reflection ratio at 800 nm wavelength was achieved. Using leftover monocrystalline Si (c-Si) wafer (125 × 125 mm~2), a 16.5% energy conversion efficiency, with 35.4% enhancement compared to the pyramid-array-textured c-Si solar cells, was made by the Si NW-array-textured solar cells due to their enhanced optical absorption characteristics. However, without SiN_x passivation, the short circuit current reduced due to the increased surface recombination when using Si NWs array as surface texturing, indicating that an optimum surface passivation was prerequisite in high-efficiency Si NW-array-textured solar cells.
机译:在本文中,已经合成了垂直排列的硅纳米线(Si NWs)阵列,并将其实现到用于光伏应用的Si NW阵列纹理化太阳能电池。根据光学反射特性检查了平面和金字塔阵列结构的衬底上的Si NWs阵列的光学特性。在800 nm波长下反射率不到2%。 Si NW使用剩下的单晶硅(c-Si)晶片(125×125 mm〜2),实现了16.5%的能量转换效率,与金字塔形纹理c-Si太阳能电池相比提高了35.4%具有阵列结构的太阳能电池,因为它们具有增强的光吸收特性。然而,如果没有SiN_x钝化,则当使用Si NWs阵列作为表面纹理时,由于增加的表面复合而导致短路电流降低,这表明在具有高效率的Si NWs阵列结构的太阳能电池中,最佳的表面钝化是必要条件。

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  • 来源
    《Journal of Applied Physics》 |2010年第9期|p.094318.1-094318.5|共5页
  • 作者单位

    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

    rnInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Research Center for Advanced Solar Cells, Chinese Academy of Sciences, China;

    rnInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

    rnInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

    rnInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

    rnInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

    rnInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

    rnInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

    rnResearch Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan;

    rnResearch Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan;

    rnResearch Center for Advanced Solar Cells, Chinese Academy of Sciences, China;

    rnResearch Center for Advanced Solar Cells, Chinese Academy of Sciences, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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