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Through-silicon via technology for three-dimensional integrated circuit manufacturing

机译:硅通孔技术,用于三维集成电路制造

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Higher performance, higher operation speed and volume shrinkage require high 3D TSV interconnect densities. This work focuses on a via-middle 3D process flow, which implies processing of the 3D-TSV after the front-end-of-line (FEOL) and before the back-end-of-line (BEOL) interconnect process. A description of the imec 300 mm TSV platform is given, and challenges towards a reliable process integration of high density high aspect-ratio 3D interconnections are also discussed in details.
机译:更高的性能,更高的运行速度和体积缩小要求更高的3D TSV互连密度。这项工作集中于中间3D处理流程,这意味着在前端(FEOL)之后和后端(BEOL)互连过程之前对3D-TSV进行处理。给出了imec 300 mm TSV平台的描述,并且还详细讨论了对高密度高长宽比3D互连的可靠过程集成的挑战。

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