Focused Ion Beam Circuit Edit on Copper Redistribution Layer

摘要

Circuit edit through RDL metallization is still feasible with today's Ga~+ FIB technology and FIB chemistries. The methodology described in this paper reduces time to market for our STMicroelectronics IC products and even reduces CE costs because it optimizes the efficient use of chemistries. Control of Cu corrosion along with control of beam rastering parameters accelerates faster milling (> 4X) of RDL than is possible with Cu-Ⅱ chemistry [12]. DCG FIB Systems offer Cu-Ⅱ chemistry to enable planar Cu milling with great success and control and is utilized at lower level metallizations.