HIGHLY CONDUCTIVE HYDROGENATED MICROCRYSTALLINE CUBIC SILICON CARBIDE FILMS DEPOSITED BY HOT WIRE CVD AT A LOW SUBSTRATE TEMPERATURE ON GLASS SUBSTRATES

摘要

N-type highly conductive hydrogenated microcrystalline cubic silicon carbide (μc-3C-SiC:H) films were successfully deposited by hot wire chemical vapor deposition (HWCVD) at a low substrate temperature (～300°C). We employed phosphine (PH{sub}3) and hexamethyldisilazane (HMDS) as phosphorous and nitrogen source materials, respectively. For the phosphorous doped films, we obtained dark conductivity (σ{sub}d) of 3.2×10{sup}(-2) S/cm and activation energy of the dark conductivity (E{sub}a) of 86 meV. For the nitrogen doped films, the σ{sub}d and E{sub}a were found to be 5.32 S/cm and 25 meV, respectively. These results indicates that doping with HMDS is effective to obtain highly conductive μc-3C-SiC:H films. We also fabricated n-type μc-3C-SiC:H(doped with HMDS)/p-type crystalline silicon heterojunotion diodes in order to investigate junction properties. The diodes showed good rectifying characteristics. These results suggest that nitrogen doped μc-3C-SiC:H films are promising for the doped layer of silicon based solar cells.