Solution-Processed Copper Telluride Nanowire Thin Film as a Back-Buffer Layer to Cadmium Telluride Solar Cells

摘要

Here, we report the application of copper telluride (Cu7Te4) nanowires (NWs) as an interfacial layer to cadmium telluride (CdTe) photovoltaics. The Cu7Te4 NWs were synthesized utilizing a hot injection colloidal method and characterized using X-ray diffraction, scanning electron microscopy and elemental analysis. As the interfacial layer was introduced, the device efficiency was improved mainly due to the improvement in open-circuit voltage (VOC) of the device. The highest VOC observed for CdS/CdTe solar cells is 857 mV with device efficiency of 14.2%.