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Investigation of the Optical and Electrical Properties of Copper Telluride and Cadmium Telluride Thin Films Using Electrodeposition Technique

机译:电沉积技术研究碲化铜和碲化镉薄膜的光电性能

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Copper and Cadmium Telluride thin films have been successfully deposited on a glass substrate indium doped Tin oxide (ITO) by electrodeposition technique. The absorbance was measured using M501 UV-visible spectrophotometer in the wavelength range of 300-900 nm. Copper and Cadmium Telluride thin films were investigated at room temperature. The absorbance of cadmium telluride thin films of sample CdTe2 and CdT3 increase with the wavelength while sample CdTe1, CdT4 and CdT5 partially increase as the wavelength increases. The transmittance spectra of the cadmium telluride thin films deposited increases with the wavelength. The absorbance of copper telluride thin films were found to be in the range of 0.152-0.334 for sample CT1, 0.064-0.254 for sample CT2, 0.065-0.257 for sample CT3, 0.049-0.272 for sample CT4 and 0.009-0.220 for sample CT5. Absorbance of copper telluride films is high in the UV region and in visible and IR regions. The transmission spectrum has a very high transmittance in the VIS-NIR regions of the electromagnetic spectrum. It is also observed that the transmittance of the films is high in visible & infrared regions. The band gap energy of (2.0eV-2.2eV for CT) and (2.2eV-2.5 for CdT) was obtained.
机译:铜和碲化铜薄膜已通过电沉积技术成功沉积在玻璃基板上的铟掺杂氧化锡(ITO)中。使用M501紫外可见分光光度计在300-900nm的波长范围内测量吸光度。在室温下研究了碲化铜和镉薄膜。样品CdTe2和CdT3的碲化镉薄膜的吸光度随波长增加,而样品CdTe1,CdT4和CdT5的吸光度随波长的增加而部分增加。沉积的碲化镉薄膜的透射光谱随波长增加。发现碲化铜薄膜的吸光度对于样品CT1为0.152-0.334,对于样品CT2为0.064-0.254,对于样品CT3为0.065-0.257,对于样品CT4为0.049-0.272,对于样品CT5为0.009-0.220。碲化铜薄膜在紫外线区域以及可见光和红外线区域的吸收率很高。透射光谱在电磁光谱的VIS-NIR区域中具有非常高的透射率。还观察到薄膜在可见光和红外区域的透射率很高。获得了(CT为2.0eV-2.2eV)和(CdT为2.2eV-2.5)的带隙能量。

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