SOI based double source tunnel FET (DS-TFET) with high on-current and reduced turn-on voltage

摘要

A novel TFET known as Double Source Tunnel FET (DS-TFET) is proposed in this paper, which provides higher ON current (I_D-ON) with smaller turn-on voltage as compared to present Si based Tunnel FETs. The tunneling area is considerably enhanced which in turn increased the on-current I_D-ON (~29.2 μA/μm) for a smaller turn-on voltage (V_tu = 0.15 volt). The results of rigorous 2D simulation are presented in this paper for various performance parameters which have shown noticeable improvement viz sub-threshold slope (Min_SS~30.92 mV/decade) and I_D-ON/I_D-OFF (~1010). The impact of varying gate dielectric constant and the tunnel gap (L_TS) is also studied and optimized for the better performance. The obtained results of the proposed work are compared with L-shaped Tunnel FET and we have procured that the proposed structure is better than the earlier reported L-shaped TFET.