Preparation of Amorphous p-type InGaZnO_4 Films by Codoping of Al and N Atoms

摘要

Codoped InGaZnO_4 films were prepared by sputtering of targets consisting of InGaZnO_4 and AIN in an Ar atmosphere. The hole-conductivity is confirmed in films prepared from the target(7% AIN) at 2×10~(-2) Torr in 0.3-0.6% O_2 atmosphere. The rectification characteristic is obtained for a PN junction of InGaZnO_4 films.