Preparation and characteristic of p-type ZnO films by Al-N codoping technique

摘要

p-Type conduction in ZnO thin films have been realized by the Al-N codoping method. The codoped films with c-axis orientations were prepared at various substrate temperatures in the range of 300-600 deg C in pure N_2O ambient .The codoped film prepared at 500 deg C shows the lowest resistivity of 54.8 OMEGA cm and highest carrier concentration of 1.32 X 0~(18) cm~(-3), which is about 10~4 times higher than that of N doped ZnO, and the film shows the best crystal quality.