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Room temperature ferromagnetism in swift heavy ion irradiated V doped ZnO thin films

机译:室温铁磁在Swift重离子照射V掺杂ZnO薄膜

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In the present study, we have investigated the effect of 50 MeV Ag-ions irradiation on structural, optical and magneticproperties of pure ZnO, Znsub0.95/subVsub0.05/subO and Znsub0.90/subVsub0.10/subO thin films. X-ray diffraction (XRD) analysis of the films before andafter ion irradiation confirms that all the films are in (002) preferred orientation. Upon ion irradiation, the increase offull width at half maximum (FWHM) and decrease of XRD intensity of (002) diffraction peak are observed.Photoluminescence (PL) spectra of ion irradiated films exhibit strong defect related emission about ~2.45 eV. It might beattributed to the defects such as oxygen vacancies in the film. The formation of oxygen vacancies upon ion irradiationresulting increase in band gap of pure ZnO, Znsub0.95/subVsub0.05/subO and Znsub0.90/subVsub0.10/subO thin films. The ion irradiated Znsub0.95/subVsub0.05/subO and Znsub0.90/subVsub0.10/subO films exhibit strong room temperature ferromagnetism as evidenced from VSM measurements. It isconclude that the spin associated with V ions together with increasing concentration of oxygen vacancies favoursenhanced ferromagnetic behaviour in irradiated V doped ZnO films.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
机译:在本研究中,我们研究了纯ZnO,Zn 0.95 v 0.05 o和zn 0.90 V 0.10 O薄膜。在和解离子辐射之前膜的X射线衍射(XRD)分析证实所有薄膜在(002)优选取向。在离子照射时,观察到半最大(FWHM)的加重过壳宽度和(002)衍射峰的XRD强度的降低。离子照射膜的PLOWMENTY(PL)光谱表现出约2.45eV的强缺陷相关发射。它可能会击中薄膜中的氧气空位等缺陷。纯ZnO带隙中的离子辐射提供氧气空位的形成,Zn 0.95 o和Zn 0.90 0.10 o薄膜。离子辐照Zn <亚> 0.95 V 0.05 O和Zn 0.90 V 0.10 O膜,表现出强室温铁磁性,如证明来自VSM测量。它是旋转与v离子相关的旋转在照射的V掺杂ZnO膜中的氧空位浓度增加的氧空位浓度的浓度。©(2012)照片光学仪表工程师(SPIE)的版权协会。仅供个人使用的摘要下载。

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