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Room temperature ferromagnetism in swift heavy ion irradiated V doped ZnO thin films

机译:快速重离子辐照V掺杂ZnO薄膜的室温铁磁性

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In the present study, we have investigated the effect of 50 MeV Ag-ions irradiation on structural, optical and magneticproperties of pure ZnO, Znsub0.95/subVsub0.05/subO and Znsub0.90/subVsub0.10/subO thin films. X-ray diffraction (XRD) analysis of the films before andafter ion irradiation confirms that all the films are in (002) preferred orientation. Upon ion irradiation, the increase offull width at half maximum (FWHM) and decrease of XRD intensity of (002) diffraction peak are observed.Photoluminescence (PL) spectra of ion irradiated films exhibit strong defect related emission about ~2.45 eV. It might beattributed to the defects such as oxygen vacancies in the film. The formation of oxygen vacancies upon ion irradiationresulting increase in band gap of pure ZnO, Znsub0.95/subVsub0.05/subO and Znsub0.90/subVsub0.10/subO thin films. The ion irradiated Znsub0.95/subVsub0.05/subO and Znsub0.90/subVsub0.10/subO films exhibit strong room temperature ferromagnetism as evidenced from VSM measurements. It isconclude that the spin associated with V ions together with increasing concentration of oxygen vacancies favoursenhanced ferromagnetic behaviour in irradiated V doped ZnO films.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
机译:在本研究中,我们研究了50 MeV Ag离子辐照对纯ZnO,Zn 0.95 V 0.05 O和Zn 0.90 V 0.10 O薄膜。离子辐照前后薄膜的X射线衍射(XRD)分析证实,所有薄膜均处于(002)优先取向。在离子辐照下,观察到半峰全宽(FWHM)的增加和(002)衍射峰的XRD强度的降低。离子辐照膜的光致发光(PL)光谱显示约2.45 eV的强缺陷相关发射。这可能是由于薄膜中的氧空位等缺陷所致。离子辐照下氧空位的形成导致纯ZnO,Zn 0.95 V 0.05 O和Zn 0.90 V 0.10的带隙增加 O薄膜。离子辐照的Zn 0.95 V 0.05 O和Zn 0.90 V 0.10 O薄膜表现出很强的室温铁磁性从VSM测量。结论是,与V离子相关的自旋以及氧空位浓度的增加有利于辐照的V掺杂的ZnO薄膜中的铁磁行为。©(2012)版权所有,光电仪器工程师学会(SPIE)。摘要的下载仅允许个人使用。

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