FABRICATION METHOD OF FERROMAGNETIC ZNO SEMICONDUCTER THIN FILMS AT ROOM TEMPERATURE

摘要

The present invention relates to a method for producing a ferromagnetic zinc oxide semiconductor thin film at room temperature. More specifically, cobalt clusters injected into a zinc oxide thin film are irradiated with heavy ions having a high energy of several hundred MeV at predetermined ion doses to decompose the cobalt clusters within a short time, and then dissolve them in a lattice of zinc oxide. It relates to a method for producing a zinc oxide thin film injected with cobalt exhibiting characteristics at room temperature.;In the present invention, the method comprises the steps of: depositing a zinc oxide thin film on a single crystal substrate by plasma assisted molecular beam epitaxy (PA-MBE); Implanting cobalt ions in a predetermined ion dose into the deposited zinc oxide thin film; Provided is a method of fabricating a ferromagnetic zinc oxide semiconductor thin film at room temperature, comprising irradiating a cobalt-infused zinc oxide thin film with a predetermined ion dose of heavy ions having high energy at room temperature.;Cobalt implanted zinc oxide semiconductor, silver ion irradiation, magnetization history, electric field, ferromagnetic, diluted magnetic semiconductor (DMS)