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RF Sensitivity of Multi Chip Package Development by Using Embedded Resistor in Package Substrate

机译:在封装基板中使用嵌入式电阻的多芯片封装开发的RF灵敏度

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Recently, mobile age is blooming and makes change of 21st century. Especially multi chip package –MCP- is located center position of this flash era. Moreover, radio frequency –RF- sensitivity determinesthe product quality and life, therefore we try to develop the RF sensitivity of MCP in wirelesscircumstance. In this study, MCP comprised NAND Flash memory, Mobile DRAM, and a substrate, wefocused on the substrate, changed substrate design and performance by using resistor embedded into 1layer of substrate. The purpose of adaption of embedded resistor is in order to control the slew rate ofsignal channel of DRAM. NiCr thin film was used for the resistor in substrate. NiCr material presentssuperior temperature coefficient of resistance –TCR- to thick film material. NiCr coated on Cu foil andthis foil laminated by conventional substrate manufacturing method. Embedded resistor applied onsignal line as 3 kinds; 1. Signal and signal strobe line by 50 Ohm, 2.Signal strobe line by 50 Ohm, and 3.Signal and signal strobe line by 20 Ohm. In case of 3, result showed 0.5 dBm increment of RF sensitivityin full strength mode, also we got the same performance at half strength mode. Embedded resistorformed substrate did not affect the reliability of MCP, from the results of reliability test; preconditioningtest, thermo-cyclic, temperature humidity, HAST, un-Bias HAST, and hot temperaturestorage test. This study showed signal waveform of DRAM is significantly effective in RF sensitivity forMCP. Passive component, resistor, made change of slew rate and revealed increase of sensitivity levelfinally.
机译:最近,移动时代正在蓬勃发展,并在21世纪发生了变化。特别是多芯片封装– MCP-位于此闪光灯时代的中心位置。此外,射频–RF-灵敏度决定 产品质量和寿命,因此我们尝试开发无线通讯中MCP的射频灵敏度 环境。在这项研究中,MCP由NAND闪存,移动DRAM和基板组成,我们 专注于基板,通过使用内置于1的电阻器来改变基板的设计和性能 基材层。适配嵌入式电阻器的目的是为了控制压摆率 DRAM的信号通道。 NiCr薄膜用作衬底中的电阻器。镍铬合金材料 对厚膜材料具有优异的电阻温度系数–TCR-。 NiCr涂覆在Cu箔上并 通过常规的基板制造方法层压该箔。嵌入式电阻应用于 信号线分为3种; 1.信号和信号选通线(50欧姆),2。信号选通线(50欧姆)和3。 信号和信号选通线20欧姆。在3的情况下,结果表明RF灵敏度增加了0.5 dBm 在全强度模式下,我们在半强度模式下也具有相同的性能。嵌入式电阻 从可靠性测试的结果来看,形成的基板不影响MCP的可靠性。预处理 测试,热循环,温度湿度,HAST,非偏置HAST和高温 存储测试。这项研究表明DRAM的信号波形对于 MCP。无源元件,电阻器,压摆率的变化和灵敏度水平的提高 最后。

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