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Mechanical Robustness of Solder Connections to Thick Film Gold

机译:机械焊接到厚膜金的牢固性

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Thick film gold metallization is required for many high reliability circuits, especially those subjected to operation inhigh temperature or high humidity environments. Traditionally, wire bonded bare die are used on these circuits, butthere is a trend to replace them with BGA packaged devices. State-of-the-art, chip scale packages increase circuitvolume by less than 20 percent, while their use greatly simplifies testing and repair, as compared to wire bonded die.The use of small, high density I/O pad arrays for attachment of BGA packages, necessitates very careful control ofthe solder reflow process to avoid excessive leaching of the gold into the solder. Also, unlike passive chipcomponents and leaded devices, the solder filet associated with a solder ball attachment does not distributemechanical loads over an extended area. Consequently, the stresses imposed on fine pitch, BGA pads are muchhigher than those imposed by other components. During aging, the gold metallization is converted to gold-tinintermetallic as inter-diffusion proceeds. This further reduces the mechanical integrity of the solder connection.This manifests itself in the observation that when BGA solder balls are subjected to accelerated aging followed byshear testing, the entire solder pad lifts off of the substrate, rather than failing in the solder joint.What we have done is construct a diffusion based model to estimate the conversion of a thick film gold metallizationpad to intermetallic and coupled this result with a finite element analysis to examine the effect of pad size and soldercomposition on the propensity of a pad to lift off the substrate, when subjected to mechanical or thermal inducedloading. We are designing experiments to compare the predictions of our model to experimental results obtainedfrom shearing solder balls, of different compositions and sizes, attached to substrates metalized with severaldifferent solderable, thick film gold materials.
机译:许多高可靠性电路,特别是那些在高可靠性电路中运行的电路,都需要厚膜金金属化 高温或高湿环境。传统上,在这些电路上使用引线键合裸片,但是 有一种趋势是将其替换为BGA封装的器件。最新的芯片级封装增加了电路 与引线键合芯片相比,它们的体积减少了不到20%,而它们的使用大大简化了测试和维修。 使用小型,高密度I / O焊盘阵列连接BGA封装时,必须非常小心地控制BGA封装。 焊料回流过程中,避免金过多地浸入焊料中。另外,与无源芯片不同 组件和含铅设备中,与焊球附件相关的焊锡不分布 扩展区域上的机械负载。因此,施加在细间距BGA焊盘上的应力非常大 比其他组件强加的那些。在时效过程中,金的金属化转化为金锡 金属间扩散。这进一步降低了焊接连接的机械完整性。 这表现在以下观察中:当BGA焊球经受加速老化后, 剪切测试中,整个焊盘都从基板上抬起,而不是出现焊点故障。 我们所做的是构造一个基于扩散的模型来估计厚膜金金属化的转化率 焊盘到金属间化合物,并将此结果与有限元分析相结合,以检查焊盘尺寸和焊料的影响 受到机械或热诱导时,在焊盘上剥离基材的倾向性上的成分 加载中。我们正在设计实验,以将模型的预测与获得的实验结果进行比较 从剪切的,具有不同成分和尺寸的焊球附着到用多种金属化的基板上 不同的可焊,厚膜金材料。

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